TY  - THES
T1  - Silicon vacancy color centers in chemical vapor deposition diamond : new insights into promising solid state single photon sources
A1  - Neu,Elke Katja
Y1  - 2012/06/26
N2  - This work extensively investigates single silicon vacancy (SiV) color centers in diamond which are promising candidates for solid state single photon sources. The SiV centers are hosted by synthetic chemical vapor deposition diamonds in which they are created during the growth due to the incorporation of silicon impurities. The SiV centers display outstanding spectral properties including bright zero-phonon-lines (ZPLs, wavelengths mostly between 736 nm and 746 nm) with linewidths as narrow as 0.7 nm together with a distinct concentration of the fluorescence (approx. 70%) in the ZPL. With single photon count rates up to 6.2 Mcps under continuous excitation, SiV centers are the brightest single color centers at present. Intensity auto-correlation measurements reveal three level population dynamics including a shelving state from which the SiV center can be reactivated by the excitation laser. Besides the ZPL, we identify previously unobserved electronic transitions in the spectral range between 820 nm and 840 nm. Using polarization spectroscopy, we investigate for the first time the transition dipole(s) for a single SiV center and find a single <110>-oriented dipole enabling fully linearly polarized single photon emission. Spectroscopy at cryogenic temperature for the first time reveals the ZPL fine structure of a single SiV center as well as mostly temperature independent population dynamics.
KW  - Diamant
KW  - Farbzentrum
KW  - Fluoreszenzspektroskopie
KW  - CVD-Verfahren
KW  - Photonenkorrelation
CY  - Saarbrücken
PB  - Universitäts- und Landesbibliothek
AD  - Postfach 151141, 66041 Saarbrücken
UR  - http://scidok.sulb.uni-saarland.de/volltexte/2012/4878
ER  -