Please use this identifier to cite or link to this item: doi:10.22028/D291-24008
Title: Stickstoffverbindungen von Elementen der dritten Hauptgruppe mit intra- und intermolekularen Donor-Akzeptor-Bindungen. - V : Spezielle Gallium- und Indium-amide mit Alkoxogruppen
Author(s): Veith, Michael
Pöhlmann, Jürgen
Language: German
Year of Publication: 1988
OPUS Source: Zeitschrift für Naturforschung / B. - 43. 1988, S. 505-512
SWD key words: Indium
Gallium
Amide
Borgruppe
Element
Stickstoffverbindungen
DDC notations: 540 Chemistry
Publikation type: Journal Article
Abstract: The lithium alkoxoamidosilane (Me2Si(OtBu)(NtBu)2 (4) and its trimethyltin derivative Me2Si(OtBu)(NtBu)SnMe3 (7) have been used, to introduce the ligand Me2Si(Otbu)(NtBu) = L into molecular compounds of gallium and indium. The following molecules were synthesized : L-M(Me)Cl (M = Ga(5), In (6)), L-InMe2 (8); L-InX2 (X = Cl (9), Br(10)), L2InX (X = Cl of temperature dependent 1H NmR spectra. the chelating effect is more pronounced in the gallium derivatives than in the indium analogues. Equilibria between L2InX/InX3 and LInx2 have bee observed in diethylether solutions. No metal(I) deribatibes LGa or LIn could be isolated. L2Ga2Cl2 (22), formally containing gallium(II), can be sublimed without decomposition at 110°C in vacuo.
Link to this record: urn:nbn:de:bsz:291-scidok-20381
hdl:20.500.11880/24064
http://dx.doi.org/10.22028/D291-24008
Date of registration: 5-Feb-2009
Faculty: SE - Sonstige Einrichtungen
Department: SE - INM Leibniz-Institut für Neue Materialien
NT - Chemie
Collections:INM
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